Hydrogen intercalation of graphene grown on 6H-SiC(0001)

Hydrogen intercalation of graphene grown on 6H-SiC(0001)

Atomic hydrogen exposures on a monolayer graphene grown on the SiC(0001) surface are shown to result in hydrogen intercalation. The hydrogen intercalation induces a transformation of the monolayer graphene and the carbon buffer layer to bi-layer graphene without a buffer layer. The STM, LEED, and core-level photoelectron spectroscopy measurements reveal that hydrogen atoms can go underneath the...

Si intercalation/deintercalation of graphene on 6H-SiC(0001)

The intercalation and deintercalation mechanisms of Si deposited on monolayer graphene grown on SiC(0001) substrates and after subsequent annealing steps are investigated using low-energy electron microscopy (LEEM), photoelectron spectroscopy (PES), and micro-low-energy electron diffraction (μ-LEED). After Si deposition on samples kept at room temperature, small Si droplets are observed on the ...

Epitaxial graphene on 6H-SiC and Li intercalation

Micro-Raman analysis of the influence of hydrogen intercalation on the epitaxial graphene grown on 4H-SiC(0001) substrate K.Grodecki

It is commonly accepted that properties of epitaxial graphene (EG) grown on SiC are determined by interaction with substrate. It was found, that hydrogen intercalation of EG grown on SiC(0001) substrates by sublimation is a promising method to increase the mobility of carriers [1]. As verified by Raman spectroscopy [2] sublimation grown samples show much stronger interaction with the SiC substr...

Charge neutrality in epitaxial graphene on 6H-SiC(0001) via nitrogen intercalation